1 http://www.fujielectric.com/products/semiconductor/ 2MBI600U4G-120 igbt modules igbt module (u series) 1200v / 600a / 2 in one package features high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive amplifer uninterruptible power supply industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specifed) items symbols conditions maximum ratings units collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v collector current ic continuous tc=25c 800 a tc=80c 600 ic pulse 1ms tc=25c 1600 tc=80c 1200 -ic 600 -ic pulse 1ms 1200 collector power dissipation pc 1 device 3670 w junction temperature tj 150 c storage temperature tstg -40 ~ +125 isolation voltage between terminal and copper base (*1) v iso ac : 1min. 4000 vac screw torque mounting (*2) m6 5.75 n m terminals (*3) m8 10 m4 2.5 note *1: all terminals should be connected together when isolation test will be done. note *2: recommendable value : mounting 4.25~5.75 nm (m6) note *3: recommendable value : main terminals 8~10 nm (m8) sense terminals 1.7~2.5 nm (m4) electrical characteristics (at tj= 25c unless otherwise specifed) items symbols conditions characteristics units min. typ. max. zero gate voltage collector current i ces v ge = 0v, v ce = 1200v - - 1.0 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 1200 na gate-emitter threshold voltage v ge (th) v ce = 20v, i c = 600ma 5.5 6.5 7.5 v collector-emitter saturation voltage v ce (sat) (main terminal) v ge = 15v i c = 600a tj=25c - 2.08 2.26 v tj=125c - 2.28 - v ce (sat) (chip) tj=25c - 1.90 2.05 tj=125c - 2.10 - input capacitance cies v ce = 10v, v ge = 0v, f = 1mhz - 68 - nf turn-on ton v cc = 600v r g on = 6.8? i c = 600a r g off = 2? v ge = 15v tj = 125oc - 1.35 - s tr - 0.65 - turn-off toff - 0.80 - tf - 0.20 - forward on voltage v f (main terminal) v ge = 0v i f = 600a tj=25c - 1.83 2.01 v tj=125c - 1.93 - v f (chip) tj=25c - 1.65 1.80 tj=125c - 1.75 - reverse recovery trr i f = 600a - 0.45 - s lead resistance, terminal-chip (*4) r lead - 0.29 - m note *4: biggest internal terminal resistance among arm. thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance (1device) rth(j-c) igbt - - 0.034 c/w fwd - - 0.060 contact thermal resistance (1device) rth(c-f) with thermal compound (*5) - 0.006 - note *5: this is the value which is defned mounting on the additional cooling fn with thermal compound.
2 igbt modules 2MBI600U4G-120 http://www.fujielectric.com/products/semiconductor/ 3 characteristics (representative) capacitance vs. collector-emitter voltage (typ.) v ge =0v, f= 1mhz, tj= 25c dynamic gate charge (typ.) v cc =600v, i c =600a, tj= 25c tj=25oc,chip tj=25oc,chip v ge =+15v,chip collector current vs. collector-emitter voltage (typ.) collector current vs. collector-emitter voltage (typ.) tj= 125c, chip collector-emitter voltage vs. gate-emitter voltage (typ.) collector-emitter voltage vs. gate-emitter voltage (typ.) 0 200 400 600 800 1000 1200 1400 0.0 1.0 2.0 3.0 4.0 5.0 c oll ec to r cu rre nt : ic [a] collector-emitter voltage : v ce [v] v ge =20v 15v 12v 10v 8v 0 200 400 600 800 1000 1200 1400 0.0 1.0 2.0 3.0 4.0 5.0 c oll ec to r cu rre nt : ic [a ] collector-emitter voltage : v ce [v] v ge =20v 15v 12v 10v 8v 0 200 400 600 800 1000 1200 1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 col lec to r cu rre nt : ic [a ] collector-emitter voltage : v ce [v] tj=125c tj=25 c 0 2 4 6 8 10 5 10 15 20 25 c oll ec to r - e m itt er volt ag e : v ce [ v ] gate - emitter voltage : v ge [ v ] ic=1200a ic=600a ic=300a 1 10 100 1000 0 10 20 30 ca p ac it an ce : c i e s , c o e s , cre s [ n f ] collector-emitter voltage : v ce [v] cies coes cres 0 200 400 600 800 1000 0 500 1000 1500 2000 2500 3000 gate charge : qg [ nc ] c olle ct or-em i tt er v olt age : v c e [ v] 0 5 10 15 20 25 gat e-em i tt er v olt age: v ge [ v] v ce v ge
2 3 igbt modules 2MBI600U4G-120 http://www.fujielectric.com/products/semiconductor/ switching time vs. gate resistance (typ.) switching loss vs. collector current (typ.) vcc=600v, ic=600a,v ge =15v, tj=125c switching loss vs. gate resistance (typ.) switching time vs. collector current (typ.) vcc=600v, v ge =15v, r g on=6.8?, r g off=2?, tj= 125c v ge =15v ,tj = 125c/ chip vcc=600v, ic=600a,v ge =15v, tj=125c reverse bias safe operating area (max.) vcc=600v, v ge =15v, r g on=6.8?, r g off=2?, tj= 125c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 200 400 600 800 1000 sw it c hing ti me : ton, t r, to ff , t f [ us ] collector current : ic [ a ] ton toff tf tr 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 4 8 12 16 20 24 28 32 36 swt ch ing time : to n, t r, t off, tf [ us ] gate resistance : r g [ ? ] tr tf tof f ton 0 25 50 75 100 125 150 175 200 225 250 0 200 400 600 800 1000 sw it c hing loss : eon, eo ff, e rr [ m j/puls e ] collector current : ic [ a ] , forward current : i f [ a ] eon eof f err 0 50 100 150 200 250 300 350 400 450 500 0 4 8 12 16 20 24 28 32 36 sw it c hing loss : eon, eo ff, e rr [ m j/puls e ] gate resistance : r g [ ? ] eoff err eon 0 200 400 600 800 1000 1200 1400 0 200 400 600 800 1000 1200 1400 co ll ec to r c u rre n t : ic [ a ] collector - emitter voltage : v ce [ v ]
4 igbt modules 2MBI600U4G-120 http://www.fujielectric.com/products/semiconductor/ 5 t ra n s i en t t he r m a l r e s i s ta n c e ( m a x . ) forward current vs. forward on voltage (typ.) chip vcc=600v, v ge =15v, r g =6.8?, tj=125oc reverse recovery characteristics (typ.) 0 200 400 600 800 1000 1200 1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 fo rw a rd c u rre n t : i f [ a ] forward on voltage : v f [ v ] tj=25oc t j=125oc 0 50 100 150 200 250 300 350 400 450 0 200 400 600 800 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 rev ers e rec ov ery ti me : t rr [ us ] re v e rs e r ec ov e ry c u rre n t : irr [ a ] forward current : i f [ a ] trr irr 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 t h e rma l re s i s t a n s e : rt h (j -c ) [ c/ w ] pulse width : p w [ sec ] fwd igbt
4 5 igbt modules 2MBI600U4G-120 http://www.fujielectric.com/products/semiconductor/ outline drawings, mm equivalent circuit schematic main emitter main collector gate sense emitter sense collector main emitter main collector sense collector sense emitter gate
6 igbt modules 2MBI600U4G-120 http://www.fujielectric.com/products/semiconductor/ warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2011. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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